2014/03/19 v.1 page 1 spn80t06 n-channel enhancement mode mosfet description applications the spn80t06 is the n-channel enhancement mode power field effect transistor which is produced using high cell density dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suitable for synchronous rectifier application, notebook computer power management and other battery powered circuits. ? dc/dc converter ? load switch ? smps secondary side synchronous rectifier features pin configuration to-220-3l to-263-2l to-262-3l part marking to-220-3l to-263-2l to-262-3l ? 60v/80a, r ds(on) = 8m ? @v gs = 10v r ds(on) = 10m ? @v gs = 5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? to-220-3l/to-263-2l/to-262-3l package design
2014/03/19 v.1 page 2 spn80t06 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 d drain 3 s source ordering information part number package part marking spn80t06t220tgb to-220-3l spn80t06 SPN80T06T262RGB to-263-2l spn80t06 spn80t06k262tgb to-262-3l spn80t06 spn80t06t220tgb : tube ; pb ? free ; halogen - free SPN80T06T262RGB : tape&reel ; pb ? free ; halogen - free spn80t06k262tgb : tube ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage vdss 60 v gate ?source voltage vgss 20 v t a =25 80 continuous drain current(t j =150 ) t a =70 i d 55 a pulsed drain current i dm 320 a t a =25 268 power dissipation t a =70 p d 134 w avalanche energy with single pulse ( tj=25 , l = 1mh , i as = 22a , v ds =100v. ) eas 320 mj operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 62.5 /w
2014/03/19 v.1 page 3 spn80t06 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 60 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =60v, v gs =0v 10 zero gate voltage drain current i dss v ds =48v, v gs =0v t j = 150 c 100 ua v gs = 10v,i d =30a 6.5 8 drain-source on-resistance r ds(on) v gs = 5v,i d =20a 8.5 10 m ? diode forward voltage v sd i s =1a,v gs =0v 1.0 v dynamic total gate charge q g 76 gate-source charge q gs 17 gate-drain charge q gd v ds =30v, v gs =10v i d = 30a 19 nc input capacitance c iss 3500 output capacitance c oss 319 reverse transfer capacitance c rss v ds =30v, v gs =0v f=1mhz 236 pf t d(on) 18 turn-on time t r 35 t d(off) 44 turn-off time t f v dd =30v, r l =1 ? v gen =10v, r g =3 ? 23 ns
2014/03/19 v.1 page 4 spn80t06 n-channel enhancement mode mosfet typical characteristics
2014/03/19 v.1 page 5 spn80t06 n-channel enhancement mode mosfet typical characteristics
2014/03/19 v.1 page 6 spn80t06 n-channel enhancement mode mosfet to-220-3l package outline millimeter inch symbol min max min max a 4.4 4.6 0.173 0.181 a1 2.23 2.53 0.088 0.100 b2 0.75 0.85 0.030 0.033 b1 1.17 1.42 0.046 0.056 c2 0.4 0.6 0.016 0.024 c1 1.2 1.4 0.047 0.055 d 9.85 10.15 0.388 0.400 e 8.96 9.46 0.353 0.372 e1 15.5 15.95 0.610 0.628 e 2.54ref 0.1ref e1 5.08ref 0.2ref f 2.7 2.9 0.106 0.114 h 0 0.3 0.000 0.012 l 12.7 13.65 0.500 0.537 l1 3.2 0.126
2014/03/19 v.1 page 7 spn80t06 n-channel enhancement mode mosfet to-263-2l package outline
2014/03/19 v.1 page 8 spn80t06 n-channel enhancement mode mosfet to-262-3l package outline millimeter inch symbol min max min max a 4.4 4.8 0.173 0.189 b 0.76 1 0.030 0.039 d 8.6 9 0.339 0.354 c 0.36 0.5 0.014 0.020 e 9.8 10.4 0.386 0.409 c2 1.25 1.45 0.049 0.057 b2 1.17 1.47 0.046 0.058 l 13.25 14.25 0.522 0.561 e 2.54ref 0.1ref l2 1.27ref 0.05ref
2014/03/19 v.1 page 9 spn80t06 n-channel enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2014 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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